smd type ic www.kexin.com.cn 1 mosfet smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source mos field effect transistor 2SK3386 features low on-resistance r ds(on)1 =21m max. (v gs =10v,i d = 17a) r ds(on)2 =36m max. (v gs =4.0v,i d = 17a) low c iss :c iss = 2100 pf typ. built-in gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v i d 30 a i dp * 100 a power dissipation t c =25 36 t a =25 1.0 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =60v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gat cutoff voltage v gs(off) v ds =10v,i d =1ma 1.5 2.0 2.5 v forward transfer admittance y fs v ds =10v,i d =17a 10 19 s r ds(on)1 v gs =10v,i d =17a 17 21 m r ds(on)2 v gs =4.0v,i d =17a 25 36 m input capacitance c iss 2100 pf output capacitance c oss 340 pf reverse transfer capacitance c rss 170 pf turn-on delay time t on 32 ns rise time t r 310 ns turn-off delay time t off 98 ns fall time tf 100 ns total gate charge q g 39 nc gate to source charge q gs 7.0 nc gate to drain charge q gd 12 nc v ds =10v,v gs =0,f=1mhz i d =17a,v gs(on) =10v,r g =10 ,v dd =30v draintosourceon-stateresistance i d =34a, v dd =48v,v gs =10v
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